Please use this identifier to cite or link to this item: http://hdl.handle.net/10923/12416
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dc.contributor.authorCândida Klein-
dc.contributor.authorBerenice Anina Dedavid-
dc.date.accessioned2018-08-06T14:02:37Z-
dc.date.available2018-08-06T14:02:37Z-
dc.date.issued2016-
dc.identifier.isbn9788593068027-
dc.identifier.urihttp://hdl.handle.net/10923/12416-
dc.language.isopt_BR-
dc.relation.ispartof22º CBECiMat - Congresso Brasileiro de Engenharia e Ciência dos Materiais 06 a 10 de Novembro de 2016, Natal, RN, Brasil, 2016, Brasil.-
dc.rightsopenAccess-
dc.subjectmicroanálise por EDS-
dc.subjectsegregation-
dc.subjectBridgman method-
dc.subjectIII ? V semiconductor-
dc.subjectFTIR-
dc.titleA INFLUÊNCIA DO TELÚRIO NAS PROPRIEDADES ELÉTRICAS E ÓPTICAS DOS COMPOSTOS SEMICONDUTORES Ga1-xInxSb CRESCIDOS PELO MÉTODO BRIDGMAN VERTICAL-
dc.typeconferenceObject-
dc.date.updated2018-08-06T14:02:36Z-
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