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Please use this identifier to cite or link to this item: https://hdl.handle.net/10923/15196
Type: conferenceObject
Title: Analyzing the behavior of FinFET SRAMs with resistive defects
Author(s): COPETTI, THIAGO S.
BALEN, TIAGO R.
MEDEIROS, GUILHERME C.
Letícia Maria Bolzani Pöhls
In: 2017 IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC), 2017, Brasil.
Issue Date: 2017
URI: http://hdl.handle.net/10923/15196
DOI: DOI:10.1109/vlsi-soc.2017.8203483
ISBN: 9781538628805
Appears in Collections:Apresentação em Evento

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