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Please use this identifier to cite or link to this item: https://hdl.handle.net/10923/15224
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dc.contributor.authorRicardo Augusto Zanotto Razera-
dc.contributor.authorIzete Zanesco-
dc.contributor.authorAdriano Moehlecke-
dc.contributor.authorHenri Yvanov Boudinov-
dc.date.accessioned2019-07-30T14:33:01Z-
dc.date.available2019-07-30T14:33:01Z-
dc.date.issued2017-
dc.identifier.urihttp://hdl.handle.net/10923/15224-
dc.language.isoen-
dc.relation.ispartofProceedings of the 32nd Symposium on Microelectronics Technology and Devices, 2017, Brasil.-
dc.rightsopenAccess-
dc.subjectCélulas Solares-
dc.subjectpassivação-
dc.subjectÓxido de silício-
dc.subjectEficiência quântica interna-
dc.titlePassivation analysis of the emitter and selective back surface field of silicon solar cells-
dc.typeconferenceObject-
dc.date.updated2019-07-30T14:33:00Z-
dc.identifier.doiDOI:10.1109/SBMicro.2017.8112994-
Appears in Collections:Apresentação em Evento

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