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Please use this identifier to cite or link to this item: https://hdl.handle.net/10923/12427
Type: Article
Title: Effects of Te additions and stirring in the In segregation in Ga1-xInxSb alloys
Author(s): Cândida Klein
Berenice Anina Dedavid
Kendra D'abreu Neto Fernandes
Nestor Heck
In: REM - International Engineering Journal
Issue Date: 2016
Volume: 69
Issue: 4
First page: 465
Last page: 471
Keywords: GaInSb
compound semiconductor III-V,
bulk crystals
vertical Bridgman
Tellurium
URI: http://hdl.handle.net/10923/12427
DOI: DOI:10.1590/0370-44672015690167
ISSN: 2448-167X
Appears in Collections:Artigo de Periódico

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